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Rev 3: Sept 2004
AOD405, AOD405L (Green Product) P-Channel Enhancement Mode Field Effect Transistor
General Description
The AOD405 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK package, this device is well suited for high current load applications. AOD405L (Green Product) is offered in a lead-free package.
Features
VDS (V) = -30V ID = -18A RDS(ON) < 32m (VGS = -10V) RDS(ON) < 60m (VGS = -4.5V)
TO-252 D-PAK
D
Top View Drain Connected to Tab
G S
G
D
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B,G Pulsed Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25C Power Dissipation B Power Dissipation A TC=100C TA=25C TA=70C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Case C
C
Maximum -30 20 -18 -18 -40 -18 40 60 30 2.5 1.6 -55 to 175
Units V V A A mJ W W C
TA=25C
G
TA=100C G
ID IDM IAR EAR PD PDSM TJ, TSTG
Symbol t 10s Steady-State Steady-State RJA RJL
Typ 16.7 40 1.9
Max 25 50 2.5
Units C/W C/W C/W
Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) gFS VSD IS Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Static Drain-Source On-Resistance VGS=-4.5V, ID=-10A Forward Transconductance VDS=-5V, ID=-18A Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Conditions ID=-250A, VGS=0V VDS=-24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS ID=-250A VGS=-10V, VDS=-5V VGS=-10V, ID=-18A TJ=125C -1.2 -40 24.5 36 41 17 -0.76 -1 -18 920 VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 190 122 3.6 18.7 VGS=-10V, VDS=-15V, ID=-18A 9.7 2.54 5.4 9 VGS=-10V, VDS=-15V, RL=0.82, RGEN=3 IF=-18A, dI/dt=100A/s 25 20 12 21.4 13 13 35 30 18 26 16 4.5 23 11.7 1100 32 43 60 -2 Min -30 -0.003 -1 -5 100 -2.4 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-18A, dI/dt=100A/s
A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation P DSM is based on steady-state R JA and the maximum allowed junction temperature of 150C. The value in any a given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB or heatsink allows it. B. The power dissipation P D is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by the package current capability. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
30 -10V 25 20 -ID (A) 15 10 5 0 0 1 2 3 4 5 -VDS (Volts) Fig 1: On-Region Characteristics 70 65 60 55 50 45 40 35 30 25 20 15 10 0 5 1.60 Normalized On-Resistance VGS=-4.5V 1.40 ID=-10A VGS=-10V ID=-18A 1.00 -3.5V -6V -5V -4.5V 30 25 -4V -ID(A) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics 125C 25C VDS=-5V
VGS=-3V
VGS=-4.5V
RDS(ON) (m)
1.20
VGS=-10V
0.80 10 15 20 25 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 125C -IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 1.0E-06 3 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 4 5 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 25C 125C
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 90 80 70 RDS(ON) (m) 60 50 40 30 20 10 0 25C ID=-18A
Alpha & Omega Semiconductor, Ltd.
AOD405, AOD405L
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
1.00E+01 8.00E+00 -VGS (Volts) 6.00E+00 4.00E+00 2.00E+00 0.00E+00 0 4 8 12 16 20 -Qg (nC) Figure 7: Gate-Charge Characteristics 1500 VDS=-15V ID=-18A Capacitance (pF) 1250 1000 750 500 Coss 250 0 0 5 10 15 20 25 30 -VDS (Volts) Figure 8: Capacitance Characteristics Crss
Ciss
100.0
TJ(Max)=150C, TA=25C 10s 1ms 10ms 0.1s 1s 10s DC 100s Power (W)
40
TJ(Max)=150C TA=25C
-ID (Amps)
RDS(ON) 10.0 limited
30
20
1.0
10
0.1 0.1 1 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 100
0 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=50C/W 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1
PD Single Pulse Ton
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.

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